Shigeji Kinoshita

Title: Shigeji Kinoshita: Innovator in Semiconductor Technology

Introduction

Shigeji Kinoshita is a prominent inventor based in Itami, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of three patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

Kinoshita's latest patents include a process for manufacturing a semiconductor memory device. This invention features an n-channel MOS dynamic memory cell that incorporates a semiconductor substrate with a p.sup.+ internal region and a p.sup.- surface region. The design includes a capacitor electrode positioned above the surface region and a transfer gate located between the capacitor electrode and the n.sup.+ region. The resistivity of the surface region, excluding the n.sup.+ region, is higher than certain portions of the internal region beneath the capacitor electrode and the n.sup.+ region. Another notable patent is a process for preparing a semiconductor device, which involves forming a nitride film on a semiconductor substrate using a plasma CVD process. An oxygen-containing layer is then created on the nitride film, followed by the addition of an aluminum-containing film.

Career Highlights

Kinoshita is associated with Mitsubishi Denki Kabushiki Kaisha, a leading company in the electronics and semiconductor industry. His work at this organization has allowed him to focus on innovative solutions that enhance semiconductor performance and reliability.

Collaborations

Some of Kinoshita's notable coworkers include Masahiko Denda and Haruhiko Abe. Their collaborative efforts have contributed to the success of various projects within the company.

Conclusion

Shigeji Kinoshita's contributions to semiconductor technology through his patents and work at Mitsubishi Denki Kabushiki Kaisha highlight his role as a key innovator in the field. His inventions continue to influence the development of advanced semiconductor devices.