The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 1984
Filed:
Jan. 03, 1983
Applicant:
Inventors:
Haruhiko Abe, Itami, JP;
Hiroshi Harada, Kawanishi, JP;
Shigeji Kinoshita, Itami, JP;
Yoshihiro Hirata, Amagasaki, JP;
Masahiko Denda, Itami, JP;
Yoichi Akasaka, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
427 85 ; 427 90 ; 427 93 ; 427 94 ; 427 95 ; 427 39 ;
Abstract
A nitride film is formed on a main surface of a semiconductor substrate by plasma CVD process and an oxygen-containing layer is formed on the nitride film and an aluminum-containing film is further formed on the oxygen-containing layer.