The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 1985
Filed:
Apr. 05, 1984
Masahiko Denda, Kobe, JP;
Shinichi Sato, Nishinomiya, JP;
Natsuro Tsubouchi, Kawanishi, JP;
Shigeji Kinoshita, Itami, JP;
Yoshikazu Ohbayashi, Ashiya, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An n-channel MOS dynamic memory cell includes a semiconductor substrate having a p.sup.+ internal region and a p.sup.- surface region disposed on the surface of the internal region except for an n.sup.+ region serving as a bit line, a capacitor electrode disposed above the surface region, and a transfer gate disposed between the capacitor electrode and the n.sup.+ region above the surface region. The surface region except for the n.sup.+ region and a portion of the internal region disposed below the transfer gate are higher in resistivity than at least one of a portion of the internal region disposed below the capacitor electrode and another portion of the internal region disposed below the n.sup.+ region.