Ibaraki, Japan

Shigeaki Shimizu


Average Co-Inventor Count = 5.1

ph-index = 2

Forward Citations = 5(Granted Patents)


Location History:

  • Kanagawa, JP (2013)
  • Ibaraki, JP (2017 - 2020)

Company Filing History:


Years Active: 2013-2020

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3 patents (USPTO):Explore Patents

Title: Shigeaki Shimizu: Innovator in Semiconductor Technology

Introduction

Shigeaki Shimizu is a prominent inventor based in Ibaraki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving the performance and efficiency of semiconductor devices.

Latest Patents

Shimizu's latest patents include innovative designs and manufacturing methods for semiconductor devices. One of his notable inventions is a semiconductor device that enhances performance by forming a semiconductor layer over a p-type semiconductor. This design includes an n-type semiconductor layer that works in conjunction with a photoreceiver. Additionally, he has developed a semiconductor device featuring a recess filled with insulating material, which effectively suppresses electric-field concentration near the recess.

Career Highlights

Throughout his career, Shimizu has worked with leading companies in the semiconductor industry, including Renesas Electronics Corporation. His expertise and innovative approach have positioned him as a key figure in advancing semiconductor technology.

Collaborations

Shimizu has collaborated with notable colleagues such as Tomoo Nakayama and Hiroyuki Okuaki. These partnerships have contributed to the development of groundbreaking technologies in the semiconductor field.

Conclusion

Shigeaki Shimizu's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry and drive innovation forward.

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