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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9589954 B1

PDFFull Text
Date of Patent:
Mar. 07, 2017

Filed:

Aug. 05, 2015

Semiconductor device having recess filled with insulating material provided between source/drain impurity region and gate insulator

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Akira Mitsuiki, Tokyo, JP;

Tomoo Nakayama, Ibaraki, JP;

Shigeaki Shimizu, Ibaraki, JP;

Hiroyuki Okuaki, Ibaraki, JP;

Assignee:

Renesas Electronics Corporation, Tokyo, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Stephen W Smoot

Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 21/32 (2006.01); H01L 21/311 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/31111 (2013.01); H01L 21/32 (2013.01); H01L 21/76232 (2013.01); H01L 21/823418 (2013.01); H01L 21/823456 (2013.01); H01L 29/0653 (2013.01); H01L 29/41775 (2013.01); H01L 29/42368 (2013.01); H01L 29/42376 (2013.01); H01L 29/7833 (2013.01); H01L 29/7835 (2013.01);
Abstract

Electric-field concentration in the vicinity of a recess is suppressed. A gate insulating film is provided on a substrate that has a drain region and a first recess therein. The first recess is located between the gate insulating film and the drain region, and is filled with an insulating film. The insulating film has a second recess on its side close to the gate insulating film. An angle defined by an inner side face of the first recess and the surface of the substrate is rounded on a side of the drain region close to the gate insulating film.

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