Hiroyuki Okuaki

Title: Hiroyuki Okuaki: Innovator in Semiconductor Technology

Introduction

Hiroyuki Okuaki is a prominent inventor based in Ibaraki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on improving the performance and efficiency of semiconductor devices.

Latest Patents

Okuaki's latest patents include a semiconductor device and a manufacturing method aimed at enhancing the performance of semiconductor devices. In his first patent, a semiconductor layer EP is formed over a p-type semiconductor PR, with an n-type semiconductor layer NR created above it. This configuration is part of a photoreceiver, which is crucial for various electronic applications. Additionally, a cap layer made from a different material than the semiconductor layer EP is formed over it, along with a silicide layer that results from a reaction between a metal and the cap layer's material. The second patent addresses a semiconductor device featuring a recess filled with insulating material, which helps suppress electric-field concentration near the recess. This design includes a gate insulating film on a substrate with a drain region and a first recess, enhancing the overall functionality of the device.

Career Highlights

Hiroyuki Okuaki is currently employed at Renesas Electronics Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

Okuaki has collaborated with notable colleagues, including Tomoo Nakayama and Shigeaki Shimizu. Their combined expertise has contributed to the successful development of innovative semiconductor solutions.

Conclusion

Hiroyuki Okuaki's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced electronic devices.