The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Nov. 13, 2018
Renesas Electronics Corporation, Tokyo, JP;
Tomoo Nakayama, Ibaraki, JP;
Shinichi Watanuki, Ibaraki, JP;
Futoshi Komatsu, Ibaraki, JP;
Teruhiro Kuwajima, Ibaraki, JP;
Takashi Ogura, Ibaraki, JP;
Hiroyuki Okuaki, Ibaraki, JP;
Shigeaki Shimizu, Ibaraki, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
In order to improve the performance of a semiconductor device, a semiconductor layer EP is formed over a p-type semiconductor PR. An n-type semiconductor layer NRis formed over the semiconductor layer EP. The semiconductor layer PR, the semiconductor layer EP, and the semiconductor layer NRrespectively configure part of a photoreceiver. A cap layer of a material different from that of the semiconductor layer EP is formed over the semiconductor layer EP, and a silicide layer, which is a reaction product of a metal and the material included in the cap layer, is formed within the cap layer. A plug having a barrier metal film BMis formed over the cap layer through the silicide layer. Here, a reaction product of the metal and the material included in the semiconductor layer NRis not formed within the semiconductor layer NR