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Title: Shibo Liang: Innovator in Field Effect Transistor Technology
Introduction
Shibo Liang is a prominent inventor based in Beijing, China. He has made significant contributions to the field of electronics, particularly in the development of field effect transistors (FETs). With a total of 3 patents to his name, Liang's work is at the forefront of semiconductor technology.
Latest Patents
Liang's latest patents include innovative designs and methods related to field effect transistors. One of his notable inventions is a field effect transistor that features a source made of a first graphene film and a channel comprising a laminate of a second graphene film and a semiconductor material layer. This design enhances the performance and efficiency of electronic devices. Another patent focuses on a field effect transistor that utilizes a Dirac material for the source, with a channel doped opposite to the source, showcasing his commitment to advancing semiconductor technology.
Career Highlights
Throughout his career, Shibo Liang has worked with several technology companies, including Beijing Huatan Technology Co., Ltd and Beijing Hua Tan Yuan Xin Electronics Technology Co., Ltd. His experience in these organizations has allowed him to apply his innovative ideas in practical settings, contributing to the advancement of electronic devices.
Collaborations
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Conclusion
Shibo Liang's contributions to the field of field effect transistors highlight his role as a key innovator in semiconductor technology. His patents reflect a deep understanding of materials and their applications in electronics, paving the way for future advancements in the industry.