The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Oct. 17, 2018
Applicants:
Beijing Hua Tan Yuan Xin Electronics Technology Co., Ltd, Beijing, CN;
Beijing Huatan Technology Co., Ltd., Beijing, CN;
Inventor:
Shibo Liang, Beijing, CN;
Assignees:
BEIJING HUA TAN YUAN XIN ELECTRONICS TECHNOLOGY CO., LTD, Beijing, CN;
BEIJING HUATAN TECHNOLOGY CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/167 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42364 (2013.01); H01L 21/02527 (2013.01); H01L 21/823412 (2013.01); H01L 21/823462 (2013.01); H01L 29/0669 (2013.01); H01L 29/167 (2013.01); H01L 29/66045 (2013.01);
Abstract
A field effect transistor (FET), a method of fabricating the field effect transistor, and an electronic device are provided. The field effect transistor comprises: a source and a drain, the source being made of a Dirac material (); a channel disposed between the source and the drain, and doped opposite to the source; and a gate () disposed on the channel and electrically insulated from the channel.