Beijing Huatan Technology Co., Ltd

Beijing Hua Tan Yuan Xin Electronics Technology Co., Ltd

Beijing Hua Tan Yuan Xin Electronics

Shibo Liang

A field effect transistor (FET), a method of fabricating a field effect transistor, and an electronic device, the field effect transistor comprises: a source and a drain, the source being made of a first graphene film; a channel disposed between the source and the drain, and comprising a laminate of a second graphene film and a material layer having semiconductor properties, the second graphene film being formed of bilayer graphene; and a gate disposed on the laminate and electrically insulated from the laminate.

Field effect transistor, method of fabricating field effect transistor, and electronic device

A field effect transistor (FET), a method of fabricating the field effect transistor, and an electronic device are provided. The field effect transistor comprises: a source and a drain, the source being made of a Dirac material (); a channel disposed between the source and the drain, and doped opposite to the source; and a gate () disposed on the channel and electrically insulated from the channel.

A field effect transistor, a method of manufacturing the field effect transistor, and an electronic device are provided, wherein the field effect transistor comprises: a source() formed of a Dirac material() and a drain(); a channel() disposed between the source() and the drain(); and a source control electrode() disposed on the source() and for controlling the doping of the Dirac material() such that the Dirac material() and the channel() are doped in an opposite manner; and a gate() disposed on the channel() and electrically insulated from the channel().

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Beijing, China

Shibo Liang