The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
Oct. 17, 2018
Beijing Hua Tan Yuan Xin Electronics Technology Co., Ltd, Beijing, CN;
Beijing Huatan Technology Co., Ltd., Beijing, CN;
Shibo Liang, Beijing, CN;
BEIJING HUA TAN YUAN XIN ELECTRONICS TECHNOLOGY CO., LTD, Beijing, CN;
BEIJING HUATAN TECHNOLOGY CO., LTD, Beijing, CN;
Abstract
A field effect transistor, a method of manufacturing the field effect transistor, and an electronic device are provided, wherein the field effect transistor comprises: a source() formed of a Dirac material() and a drain(); a channel() disposed between the source() and the drain(); and a source control electrode() disposed on the source() and for controlling the doping of the Dirac material() such that the Dirac material() and the channel() are doped in an opposite manner; and a gate() disposed on the channel() and electrically insulated from the channel().