Shibo Jiao

Title: Shibo Jiao: Innovator in Quantum Dot Technology

Introduction

Shibo Jiao is a prominent inventor based in Guangdong, China. He has made significant contributions to the field of optoelectronics, particularly in the development of quantum dot light-emitting diode (QLED) devices. With a total of 6 patents to his name, Jiao's work has advanced the performance and efficiency of light-emitting technologies.

Latest Patents

One of Jiao's latest patents is a quantum dot light-emitting diode device and its manufacturing method. This invention includes a substrate and a first electrode, with a hole layer vertically disposed on an anode. The hole layer features a sidewall, an electron transport layer, and a quantum dot layer, culminating in a second electrode. The high density of zinc oxide nanowires in this design significantly enhances light current density, thereby improving the brightness and overall light-emitting performance of the device. Another notable patent involves a fabricating method for a QLED device, which enhances carrier recombination efficiency and luminous brightness through innovative material doping and barrier techniques.

Career Highlights

Shibo Jiao has worked with Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., where he has contributed to the advancement of semiconductor display technologies. His expertise in quantum dot technology has positioned him as a key player in the industry.

Collaborations

Jiao has collaborated with notable professionals in his field, including Wei Yuan and Yuanchun Wu. These partnerships have fostered innovation and development in quantum dot technologies.

Conclusion

Shibo Jiao's contributions to the field of quantum dot light-emitting diodes exemplify his innovative spirit and dedication to advancing optoelectronic technologies. His patents reflect a commitment to improving light-emitting performance, making him a significant figure in the industry.