The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Nov. 27, 2017
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, Guangdong, CN;
Yuanchun Wu, Guangdong, CN;
Wei Yuan, Guangdong, CN;
Shibo Jiao, Guangdong, CN;
Zheng Xu, Guangdong, CN;
Abstract
The disclosure provides a fabricating method of a QLED device and a QLED device. In the fabricating method of a QLED device, a mixed light-emitting layer is formed by doping a quantum dot material with a second hole transporting material having a valence band energy level between the quantum dot material and the first hole transporting material; a stepped barrier between the first hole transporting material and the doped second hole transporting material is used to enhance the hole injection; simultaneously, the first hole transporting material with a higher valence band energy level can block the electrons on one side of the hole transport layer close to the cathode to weaken the injection of electrons into the mixed light-emitting layer, thereby promoting the balance of carriers in the mixed light-emitting layer, improving the carrier recombination efficiency, and then improving the luminous efficiency and brightness of the QLED device.