Shi-Shung Peng

Title: Innovations of Shi-Shung Peng in Semiconductor Technology

Introduction

Shi-Shung Peng is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the design and improvement of NMOS transistors. With a total of 2 patents to his name, his work has had a profound impact on the industry.

Latest Patents

One of Shi-Shung Peng's latest patents focuses on the narrow width effect improvement with a photoresist plug process and STI corner ion implantation. This method aims to reduce the inverse narrow width effect in NMOS transistors. The process involves depositing an oxide liner in a shallow trench formed to isolate active areas in a substrate. A photoresist plug is created in the trench and recessed below the substrate's top to expose the oxide liner. An angled indium implant is then performed through the oxide liner into the substrate. After the plug is removed, an insulator is deposited to fill the trenches. Following planarization and wet etch steps, a gate dielectric layer and a patterned gate layer are formed. This innovative approach results in an improved Vt roll-off of 40 to 45 mVolts for both long and short channels, without degrading junction or isolation performance. The flexibility of the process is enhanced by varying the indium implant dose and angle.

Career Highlights

Shi-Shung Peng is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to push the boundaries of semiconductor technology. His expertise and innovative mindset have positioned him as a key player in the industry.

Collaborations

Throughout his career, Shi-Shung has collaborated with talented individuals such as Yi-Ming Sheu and Da-Wen Lin. These collaborations have fostered an environment of innovation and creativity, leading to advancements in semiconductor technology.

Conclusion

Shi-Shung Peng's contributions to the field of semiconductor technology, particularly through his innovative patents, have established him as a prominent inventor. His work continues to influence the development of NMOS transistors and the broader semiconductor industry.