Shi Sheng Hu

Title: Shi Sheng Hu: Innovator in Semiconductor Technology

Introduction

Shi Sheng Hu is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly with his innovative patent that addresses the challenges in semiconductor structures.

Latest Patents

Shi Sheng Hu holds a patent for a "Semiconductor structure with metal ion capture layer." This patent describes a semiconductor structure that includes a metal ion capture layer and outlines a method for forming this structure. The method involves creating a first fin structure and a second fin structure on a substrate, followed by the formation of gate structures over these fin structures. Additionally, the method includes the formation of a dielectric layer and the creation of an opening to incorporate the metal ion capture layer.

Career Highlights

Shi Sheng Hu is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has contributed to advancements in semiconductor technology, enhancing the efficiency and performance of electronic devices.

Collaborations

Shi Sheng Hu has collaborated with talented coworkers, including Yi Ting Liao and Chao-Chi Chen, who have also contributed to the field of semiconductor research.

Conclusion

Shi Sheng Hu's innovative work in semiconductor technology, particularly his patent for a semiconductor structure with a metal ion capture layer, showcases his commitment to advancing the industry. His contributions are vital for the ongoing development of efficient electronic components.