Taiwan Semiconductor Manufacturing Comp. Ltd.

Shi Sheng Hu

Chao-Chi Chen

Bo-Wei Chen

Yi Ting Liao

Shun Chi Tsai

The present disclosure describes a semiconductor structure with a metal ion capture layer and a method for forming the structure. The method includes forming a first fin structure and a second fin structure on a substrate and forming a first gate structure over the first fin structure and a second gate structure over the second fin structure, where the first gate structure adjoins the second gate structure. The method further includes forming a dielectric layer on the first and second gate structures, removing a portion of the dielectric layer above an adjoining portion of the first and second gate structures to form an opening, and forming a metal ion capture layer in the opening.

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Tainan, Taiwan

Shi Sheng Hu