Shi-Chung Sun

Title: Shi-Chung Sun: Innovator in Semiconductor Technology

Introduction

Shi-Chung Sun is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His innovative work focuses on improving the efficiency and effectiveness of semiconductor devices.

Latest Patents

One of Shi-Chung Sun's latest patents is the development of a MOCVD molybdenum nitride diffusion barrier for copper metallization. This patent describes a new method of forming a molybdenum nitride barrier layer through chemical vapor deposition using the precursor bisdiethylamido-bistertbutylimido-molybdenum (BDBTM). The barrier layer is crucial for preventing copper diffusion during the fabrication of integrated circuit devices. The process involves providing semiconductor device structures on a substrate, depositing an insulating layer, and etching a via opening to contact the semiconductor structures. The conformally deposited molybdenum nitride barrier layer ensures the integrity of the copper metallization process.

Career Highlights

Shi-Chung Sun has worked with notable companies in the semiconductor industry, including United Microelectronics Corporation and Taiwan Semiconductor Manufacturing Company Ltd. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Throughout his career, Shi-Chung Sun has collaborated with talented individuals such as Hien-Tien Chiu and Tsai-Fu Chen. These partnerships have fostered innovation and have been instrumental in the development of new technologies in the semiconductor field.

Conclusion

Shi-Chung Sun's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced semiconductor devices, ensuring progress in this critical field.