Shi-Cheng Lin

Title: Shi-Cheng Lin: Innovator in Semiconductor Technology

Introduction

Shi-Cheng Lin is a notable inventor based in Kaohsiung County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative designs and methods.

Latest Patents

Shi-Cheng Lin holds a patent for a "Semiconductor device with L-shaped spacer and method of manufacturing the same." This invention provides a semiconductor device that includes a substrate, a composite spacer, and a tunnel insulating layer. The substrate features a shallow trench isolation structure alongside a neighboring active area. The composite spacer is strategically formed on the sidewall of the shallow trench isolation structure and consists of a first insulating layer and an L-shaped second insulating layer spacer. The first insulating layer is positioned between the L-shaped second insulating layer spacer and the substrate. Additionally, the tunnel insulating layer is situated on the substrate of the active area and connects to the first insulating layer of the composite spacer on its corresponding side.

Career Highlights

Shi-Cheng Lin is currently employed at Promos Technologies, Inc., where he continues to advance his research and development in semiconductor devices. His work has been instrumental in enhancing the efficiency and performance of semiconductor technologies.

Collaborations

Some of his coworkers include Chung-We Pan and Ching-Hung Fu, who contribute to the innovative environment at Promos Technologies, Inc.

Conclusion

Shi-Cheng Lin's contributions to semiconductor technology through his patent and work at Promos Technologies, Inc. highlight his role as a key innovator in the field. His advancements are paving the way for future developments in semiconductor devices.