The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Aug. 21, 2006
Chung-we Pan, Pingtung County, TW;
Shi-cheng Lin, Kaohsiung County, TW;
Ching-hung Fu, Hsin-Chu, TW;
Chih-ping Chung, Hsin-Chu, TW;
Chung-We Pan, Pingtung County, TW;
Shi-Cheng Lin, Kaohsiung County, TW;
Ching-Hung Fu, Hsin-Chu, TW;
Chih-Ping Chung, Hsin-Chu, TW;
Promos Technologies Inc., Hsinchu, TW;
Abstract
A semiconductor device with an L-shape spacer and the method for manufacturing the same are provided. The semiconductor device comprises a substrate, a composite spacer, and a tunnel insulating layer. The substrate comprises a shallow trench isolation structure and a neighboring active area. The composite spacer is formed on the sidewall of the shallow trench isolation structure, and further comprises a first insulating layer and an L-shape second insulating layer spacer, wherein the first insulating layer is located between the L-shape second insulating layer spacer and the substrate. The tunnel insulating layer is located on the substrate of the active area and connects to the first insulating layer of the composite spacer on its corresponding side.