This inventor holds 2 USPTO granted patents. Top assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation. Active years: 2010-2013.
Company Filing History:
2 out of 1,749 
1 out of 948 Years Active: 2010-2013
Title: Innovations of Shenghe Huang in EEPROM Technology
Introduction
Shenghe Huang is a notable inventor based in Shanghai, China. He has made significant contributions to the field of memory technology, particularly in the development of Electrically Erasable Programmable Read-Only Memory (EEPROM) devices. With a total of 2 patents, his work has advanced the capabilities and efficiency of memory storage solutions.
Latest Patents
Huang's latest patents include a "System and method for EEPROM architecture." This invention outlines a method for manufacturing an EEPROM device, which involves providing a substrate and forming a gate oxide over it. The process includes the use of a mask to define a tunnel opening, selective etching to create a tunnel oxide layer, and the formation of a floating gate and a selective gate. Additionally, the method incorporates angle doping to create doped regions in the substrate, enhancing the device's functionality.
Another significant patent is the "Method and structure of a one-time programmable memory device in an embedded EEPROM." This invention describes a structure and manufacturing method for an OTP-EPROM integrated circuit. The design features a substrate with a surface region, a gate dielectric, and various gates that work together to optimize memory performance. The structure is designed to improve the efficiency and reliability of embedded EEPROM systems.
Career Highlights
Shenghe Huang has worked with prominent companies in the semiconductor industry, including Semiconductor Manufacturing International Corporation in Shanghai and Beijing. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge technology in memory devices.
Collaborations
Huang has collaborated with notable colleagues such as Yipeng Chan and Yipeng Jan. Their teamwork has likely fostered innovative ideas and advancements in the field of memory technology.
Conclusion
Shenghe Huang's contributions to EEPROM technology through his patents and career experiences highlight his role as a significant inventor in the semiconductor industry. His work continues to influence the development of advanced memory solutions.