This inventor holds 1 USPTO granted patent. Top assignee: Macronix International Co., Ltd.. Active years: 2013.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2013
Title: Innovations of Sheng Hui Hsieh in Semiconductor Technology
Introduction
Sheng Hui Hsieh is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the formation of metal silicide contact pads. His innovative techniques have the potential to enhance the performance and efficiency of semiconductor devices.
Latest Patents
Sheng Hui Hsieh holds a patent for a method related to metal silicide formation. The patent describes techniques for forming metal silicide contact pads on semiconductor devices. In one exemplary embodiment, the method involves depositing a metal layer on and between a plurality of raised silicon-based features formed on a semiconductor substrate. The metal layer comprises metal capable of reacting with external silicon-based portions of the features to form a metal silicide. Additionally, the method includes depositing a cap layer on the metal layer, ensuring that the thickness of the cap layer on the metal layer between the raised features is greater than or equal to that on the raised features. The process also involves annealing the structure to facilitate the reaction between the metal layer and the external silicon-based portions, resulting in the formation of metal silicide pads.
Career Highlights
Sheng Hui Hsieh is currently employed at Macronix International Co., Ltd., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.
Collaborations
Sheng Hui Hsieh has collaborated with notable colleagues such as Tuung Luoh and Ricky Huang. Their combined expertise contributes to the innovative environment at Macronix International Co., Ltd.
Conclusion
Sheng Hui Hsieh's contributions to semiconductor technology through his patent on metal silicide formation exemplify the importance of innovation in this field. His work not only enhances the functionality of semiconductor devices but also showcases the collaborative spirit of research and development in the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
