The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Oct. 29, 2010
Tuung Luoh, Taipei, TW;
Sheng Hui Hsieh, Taipei, TW;
Ricky Huang, Taipei, TW;
Chin-ta Su, Yunlin Country, TW;
Tahone Yang, Miaoli County, TW;
Kuang-chao Chen, Taipei, TW;
Tuung Luoh, Taipei, TW;
Sheng Hui Hsieh, Taipei, TW;
Ricky Huang, Taipei, TW;
Chin-Ta Su, Yunlin Country, TW;
Tahone Yang, Miaoli County, TW;
Kuang-Chao Chen, Taipei, TW;
Abstract
Techniques for forming metal silicide contact pads on semiconductor devices are disclosed, and in one exemplary embodiment, a method may comprise depositing a metal layer on and between a plurality of raised silicon-based features formed on a semiconductor substrate, the metal layer comprising metal capable of reacting with external silicon-based portions of the features to form a metal silicide. In addition, such a method may also include depositing a cap layer on the metal layer deposited on and between the plurality of raised silicon-based features, wherein a thickness of the cap layer on the metal layer between the raised features is greater than or equal to a thickness of the cap layer on the metal layer on the raised features. Furthermore, such a method may also include annealing the structure to cause portions of the metal layer to react with portions of the external silicon-based portions of the features to form metal silicide pads on and between the raised features.