Taipei, Taiwan

Ricky Huang

This inventor holds 1 USPTO granted patent. Top assignee: Macronix International Co., Ltd.. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ricky Huang. Retrieved from https://idiyas.com/inventor/ricky-huang-lcl3q2k8

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Ricky Huang - Innovator in Semiconductor Technology

Introduction

Ricky Huang is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the formation of metal silicide contact pads. His innovative methods have the potential to enhance the performance and efficiency of semiconductor devices.

Latest Patents

Ricky Huang holds a patent for a method related to metal silicide formation. This patent, titled "Metal silicide formation," discloses techniques for forming metal silicide contact pads on semiconductor devices. In one exemplary embodiment, the method involves depositing a metal layer on and between a plurality of raised silicon-based features formed on a semiconductor substrate. The metal layer comprises metal capable of reacting with external silicon-based portions of the features to form a metal silicide. Additionally, the method includes depositing a cap layer on the metal layer, ensuring that the thickness of the cap layer on the metal layer between the raised features is greater than or equal to that on the raised features. The process also involves annealing the structure to facilitate the reaction between the metal layer and the external silicon-based portions, resulting in the formation of metal silicide pads.

Career Highlights

Ricky Huang is currently employed at Macronix International Co., Ltd., where he continues to innovate in semiconductor technologies. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

Ricky has collaborated with notable colleagues, including Chin-Ta Su and Kuang-Chao Chen. Their combined expertise contributes to the innovative environment at Macronix International Co., Ltd.

Conclusion

Ricky Huang's contributions to semiconductor technology through his patent on metal silicide formation exemplify his role as an innovator in the field. His work not only enhances the performance of semiconductor devices but also showcases the importance of collaboration in driving technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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