Sheng-Hsuan Wei

Title: Innovations of Sheng-Hsuan Wei in Semiconductor Technology

Introduction

Sheng-Hsuan Wei is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on enhancing the efficiency and performance of semiconductor devices.

Latest Patents

One of his latest patents is titled "Semiconductor device comprising air gaps having different configurations." This invention describes a semiconductor device that includes a first interlayer dielectric layer disposed over a substrate, metal wirings, and a second interlayer dielectric layer. The device features a first air gap and a second air gap, with specific arrangements of metal wirings that optimize space and performance. Another notable patent is "Semiconductor device and manufacturing method thereof," which outlines a method for creating a semiconductor device. This method involves forming a first dielectric layer over a substrate, creating recesses, and embedding metal wirings, ultimately leading to the formation of air gaps that enhance the device's functionality.

Career Highlights

Sheng-Hsuan Wei has established himself as a key figure in the semiconductor industry through his innovative designs and methods. His patents reflect a deep understanding of semiconductor manufacturing processes and materials, contributing to advancements in the field.

Collaborations

Throughout his career, Wei has collaborated with notable colleagues, including Yu-Bey Wu and Dian-Hau Chen. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Sheng-Hsuan Wei's contributions to semiconductor technology are noteworthy, with his patents paving the way for advancements in the industry. His work continues to influence the development of more efficient semiconductor devices.