Shen-Tsai Huang

Title: Innovations of Shen-Tsai Huang in Memory Device Technology

Introduction

Shen-Tsai Huang is a notable inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of memory device technology, holding a patent that showcases his innovative approach to memory systems. His work reflects a deep understanding of the complexities involved in memory architecture.

Latest Patents

Shen-Tsai Huang holds a patent for a memory device that includes first and second memory arrays, first and second bit line driving circuits, first and second word line driving circuits, a read/write circuit, a controller, and first and second reference driving circuits. The first and second memory arrays consist of several memory units. The bit line driving circuits are designed to interpret a memory bit address and drive a bit line accordingly. The word line driver circuits interpret the memory word address and drive the word line. The read/write circuit is responsible for reading, setting, or resetting the memory units. The controller enables the first and second memory arrays to operate in either a single memory unit mode or a dual memory unit mode. Additionally, the reference driving circuits are tasked with driving reference rows.

Career Highlights

Throughout his career, Shen-Tsai Huang has worked with prominent companies in the technology sector. He has been associated with Jiangsu Advanced Memory Technology Co., Ltd. and Alto Memory Technology Corporation. His experience in these organizations has allowed him to