Jiangsu Advanced Memory Technology Co., Ltd.

Alto Memory Technology Corporation

Shen-Tsai Huang

Jui-Jen Wu

Fan-Yi Jien

Junhua Zheng

A memory device includes first and second memory arrays, first and second bit line driving circuits, first and second word line driving circuits, a read/write circuit, a controller, and first and second reference driving circuits. The first and second memory arrays include several memory units. The first and second bit line driving circuits are configured to interpret a memory bit address and drive a bit line. The first and second word line driver circuits are configured to interpret the memory word address and drive the word line. The read/write circuit is configured to read, set or reset the memory units. The controller is configured to switch the first and second memory arrays to work in a single memory unit mode or a dual memory unit mode. The first and second reference driving circuits are configured to drive reference rows.

Growing community of inventors

Hsinchu County, Taiwan

Shen-Tsai Huang