Shang-De Ted Chang

Title: Innovations of Shang-De Ted Chang

Introduction

Shang-De Ted Chang is a prominent inventor based in Fremont, CA. He has made significant contributions to the field of microelectronics, holding a total of 13 patents. His work primarily focuses on advancements in memory cell technology, particularly in PMOS memory cells.

Latest Patents

One of his latest patents is titled "Apparatus and method for programming PMOS memory cells." This invention involves applying a program voltage to the control gate of a PMOS floating gate memory cell, enabling the injection of hot electrons through band-to-band tunneling (BTBT). As the threshold voltage of the cell increases due to charge accumulation, the injection of BTBT induced hot electrons diminishes. The program voltage is then reduced to induce channel hot electrons (CHE) into the floating gate, enhancing the charge accumulation rate.

Another notable patent is the "Nonvolatile PMOS two transistor memory cell and array." This patent describes a nonvolatile memory array consisting of multiple PMOS two-transistor (2T) memory cells. Each cell includes a PMOS floating gate transistor and a PMOS select transistor, connected between a bit line and a common source line. The programming of the 2T cells utilizes a combination of FN tunneling and BTBT induced hot electron injection, while erasure is achieved through FN tunneling.

Career Highlights

Shang-De Ted Chang is associated with Programmable Microelectronics Corporation, where he continues to innovate in the field of microelectronics. His work has significantly impacted the development of nonvolatile memory technologies.

Collaborations

He has collaborated with notable coworkers such as Jayson Giai Trinh and Nader A Radjy, contributing to various projects and advancements in their field.

Conclusion

Shang-De Ted Chang's contributions to microelectronics and memory cell technology are noteworthy. His innovative patents and collaborations reflect his commitment to advancing the field.