Company Filing History:
Years Active: 2008
Title: Innovations by Shan Wong in Silicon Dielectric Materials
Introduction
Shan Wong is a notable inventor based in San Jose, CA, who has made significant contributions to the field of semiconductor technology. He holds 2 patents that focus on advanced methods for forming silicon-containing dielectric materials. His work is instrumental in enhancing the efficiency and effectiveness of semiconductor manufacturing processes.
Latest Patents
Wong's latest patents include innovative methods for gap-fill depositions in the formation of silicon-containing dielectric materials. One of his patents describes a method to form a silicon oxide layer by providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate. This method involves using various precursors such as TMOS, TEOS, OMTS, OMCTS, and TOMCATS, along with an oxidizing precursor to facilitate the reaction that forms the silicon oxide layer. Additionally, he has developed a method that introduces hydroxyl-containing precursors in the formation of dielectric materials. This chemical vapor deposition method allows for the formation of dielectric material in a trench on a substrate by reacting silicon-containing precursors, oxidizing gas, and hydroxyl-containing precursors.
Career Highlights
Shan Wong is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His work at Applied Materials has positioned him as a key player in the development of innovative technologies that drive advancements in semiconductor manufacturing.
Collaborations
Wong collaborates with talented professionals in his field, including Nitin K Ingle and Xinyun Xia. These collaborations enhance the innovative potential of his projects and contribute to the overall success of their endeavors.
Conclusion
Shan Wong's contributions to the field of semiconductor technology through his patents and work at Applied Materials, Inc. highlight his role as an influential inventor. His innovative methods for forming silicon-containing dielectric materials are paving the way for advancements in semiconductor manufacturing processes.