The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Aug. 26, 2005
Nitin K. Ingle, Santa Clara, CA (US);
Shan Wong, San Jose, CA (US);
Xinyun Xia, Sunnyvale, CA (US);
Vikash Banthia, Mountain View, CA (US);
Won B. Bang, Gilroy, CA (US);
Yen-kun V. Wang, Union City, CA (US);
Nitin K. Ingle, Santa Clara, CA (US);
Shan Wong, San Jose, CA (US);
Xinyun Xia, Sunnyvale, CA (US);
Vikash Banthia, Mountain View, CA (US);
Won B. Bang, Gilroy, CA (US);
Yen-Kun V. Wang, Union City, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.