The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2008
Filed:
Dec. 20, 2004
Nitin K. Ingle, Santa Clara, CA (US);
Shan Wong, San Jose, CA (US);
Xinyun Xia, Sunnyvale, CA (US);
Vikash Banthia, Mountain View, CA (US);
Won B. Bang, Gilroy, CA (US);
Yen-kun V. Wang, Fremont, CA (US);
Zheng Yuan, Fremont, CA (US);
Nitin K. Ingle, Santa Clara, CA (US);
Shan Wong, San Jose, CA (US);
Xinyun Xia, Sunnyvale, CA (US);
Vikash Banthia, Mountain View, CA (US);
Won B. Bang, Gilroy, CA (US);
Yen-Kun V. Wang, Fremont, CA (US);
Zheng Yuan, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.