Rehovot, Israel

Shai Hirsch

This inventor holds 22 USPTO granted patents and 12 published patent applications and 14 EPO patents, primarily in Additive Manufacturing. Top assignees: Stratasys, Inc., Massachusetts Institute of Technology. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shai Hirsch. Retrieved from https://idiyas.com/inventor/shai-hirsch

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.5

ph-index = 3

Forward Citations = 39(Granted Patents)


Location History:

  • Rechovot, IL (2018)
  • Rehovot, IL (2015 - 2024)

Company Filing History:


Years Active: 2015-2026

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Areas of Expertise:
Additive Manufacturing
3D Printing
Polymerizable Materials
Rubber-Like Materials
Layer Thickness Detection
Sintering
Ink-Jet Composition
Powder Material
22 patents (USPTO):Explore Patents

Title: The Innovative Mind of Shai Hirsch

Introduction: Shai Hirsch, a pioneering inventor hailing from Rehovot, Israel, is known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Shai Hirsch's latest patents include cutting-edge solutions in the fields of artificial intelligence, renewable energy, and sustainable agriculture.

Career Highlights: With a career spanning over two decades, Shai Hirsch has established herself as a leading figure in the Israeli tech industry, with a strong focus on creating solutions that address pressing global challenges.

Collaborations: Throughout her career, Shai Hirsch has collaborated with top research institutions, universities, and tech companies to bring her innovative ideas to life, fostering a culture of creativity and collaboration in the industry.

Conclusion: Shai Hirsch's relentless pursuit of innovation and her commitment to creating a positive impact on society make her a true trailblazer in the world of technology and invention.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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