Location History:
- Pyungtaek, KR (2005 - 2006)
- Kyungki-do, KR (2004 - 2007)
Company Filing History:
Years Active: 2004-2007
Title: Seung Jin Yoo: Innovator in Vertical GaN Light Emitting Diodes
Introduction
Seung Jin Yoo is a prominent inventor based in Kyungki-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of vertical GaN light emitting diodes. With a total of 8 patents to his name, Yoo continues to push the boundaries of innovation in this area.
Latest Patents
One of his latest patents is focused on a vertical GaN light emitting diode and the method for manufacturing it. This invention includes a first conductive GaN clad layer with an upper surface that has a first contact formed on it. An active layer is situated on the lower surface of this first conductive GaN clad layer. Additionally, a second conductive GaN clad layer is formed on the lower surface of the active layer, along with a conductive adhesive layer on the second conductive GaN clad layer. A conductive substrate, which has a second contact formed on its lower surface, is placed on the lower surface of the conductive adhesive layer. The method for manufacturing these vertical GaN light emitting diodes involves removing the sapphire substrate from the light emitting structure to prevent damage to the GaN single crystal plane.
Career Highlights
Seung Jin Yoo is currently employed at Samsung Electro-Mechanics Co., Ltd., where he continues to innovate and develop new technologies. His work has been instrumental in advancing the capabilities of light emitting diodes, which are crucial for various applications in electronics and lighting.
Collaborations
Throughout his career, Yoo has collaborated with notable colleagues, including Young Ho Park and Hun Joo Hahm. These partnerships have contributed to the successful development of his innovative technologies.
Conclusion
Seung Jin Yoo is a key figure in the field of semiconductor technology, particularly known for his advancements in vertical GaN light emitting diodes. His contributions and ongoing work at Samsung Electro-Mechanics Co., Ltd. highlight his commitment to innovation and excellence in this vital area of technology.