The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2006
Filed:
Apr. 27, 2005
Young Ho Park, Kyungki-do, KR;
Hun Joo Hahm, Kyungki-do, KR;
Jeong Seok NA, Seoul, KR;
Seung Jin Yoo, Kyungki-do, KR;
Young Ho Park, Kyungki-do, KR;
Hun Joo Hahm, Kyungki-do, KR;
Jeong Seok Na, Seoul, KR;
Seung Jin Yoo, Kyungki-do, KR;
Samsung Electro-Mechanics Co., Ltd., Kyungki-Do, KR;
Abstract
Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first conductive GaN clad layer, a second conductive GaN clad layer formed on a lower surface of the active layer, a conductive adhesive layer formed on the second conductive GaN clad layer, and a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer. The method for manufacturing the vertical GaN light emitting diodes comprises the step of removing the sapphire substrate from the light emitting structure so as to prevent the damages on a GaN single crystal plane of the structure.