Seongnam-si, South Korea

Seung-Hwan Shin

USPTO Granted Patents = 7 

Average Co-Inventor Count = 2.7

ph-index = 3

Forward Citations = 30(Granted Patents)


Location History:

  • Ulsan, KR (2013 - 2015)
  • Seongnam-si, KR (2014 - 2021)

Company Filing History:


Years Active: 2013-2021

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7 patents (USPTO):Explore Patents

Title: Seung-Hwan Shin: Innovator in Memory Technology

Introduction

Seung-Hwan Shin is a prominent inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of memory technology, holding a total of 7 patents. His work focuses on enhancing the efficiency and functionality of memory systems and devices.

Latest Patents

Among his latest patents are innovations in memory systems, memory devices, and memory controllers. One notable patent describes a memory system that issues a first status check signal after a specific delay time since the initiation of a program operation for memory cells. This method allows for an efficient status check operation related to data programming. Another patent involves nonvolatile memory devices, which include a memory cell array and a page buffer unit that outputs verify-read results. This invention enhances the programming methods for nonvolatile memory devices, ensuring better performance and reliability.

Career Highlights

Seung-Hwan Shin has worked with leading companies in the technology sector, including Samsung Electronics Co., Ltd. and SK Hynix Inc. His experience in these organizations has allowed him to develop and refine his innovative ideas in memory technology.

Collaborations

Throughout his career, Seung-Hwan Shin has collaborated with notable professionals in the field, including Kitae Park and Ohsuk Kwon. These collaborations have contributed to the advancement of memory technology and the successful development of his patented inventions.

Conclusion

Seung-Hwan Shin is a key figure in the innovation of memory technology, with a strong portfolio of patents that reflect his expertise and dedication to the field. His contributions continue to influence the development of advanced memory systems and devices.

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