The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Jun. 10, 2013
Samsung Electronics Co., Ltd, Suwon-si, Gyeonggi-do, KR;
Ohsuk Kwon, Seoul, KR;
Sang-Hyun Joo, Hwaseong-si, KR;
HyeongJun Kim, Anyang-si, KR;
Kitae Park, Seongnam-si, KR;
Seung-Hwan Shin, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A nonvolatile memory device includes a memory cell array including a plurality of memory cells, a page buffer circuit connected with the memory cell array via a plurality of bit lines and configured to selectively pre-charge the plurality of bit lines, and control logic configured to control the page buffer circuit such that a pre-charge voltage is applied to selected bit lines of the plurality of bit lines during a first time at a read operation and such that a pre-charge voltage is applied to selected bit lines of the plurality of bit lines during a second time different from the first time at a verification read operation. The second time is determined on the basis of the number of selected bit lines of the plurality of bit lines at the verification read operation.