Samsung Electronics Co., Ltd.

Skhynix Inc.

Seung-Hwan Shin

Kitae Park

Ohsuk Kwon

Sangyong Yoon

BoGeun Kim

Youngsun Song

Hyun-Wook Wook Park

Sang-Hyun Joo

Bo-Geun Kim

Sang-Yong Yoon

Jun-Hee Lee

Woong-Sik Shin

HyeongJun Kim

A memory system, a memory device, a memory controller and an operating method thereof. By issuing a first status check signal when a first delay time elapses since a first point in time at which a program operation for first memory cells corresponding to a first word line is started and by issuing a second status check signal when a second delay time different from the first delay time elapses since a second point in time at which a program operation for second memory cells corresponding to a second word line is started, it is possible to efficiently perform a status check operation related with a program operation of data.

Memory system, memory device and memory controller

A nonvolatile memory device includes a memory cell array, a page buffer unit which output a verify-read result, a reference current generating unit which generates a reference current signal, a page buffer decoding unit which outputs currents according to the verify-read result. The nonvolatile memory device further includes an analog bit counting unit which counts the currents, a digital adding unit which calculates an accumulated sum of the counting result, a pass/fail checking unit which outputs a pass signal or fail signal according to the calculation result, and a control unit controlling a program operation.

Nonvolatile memory devices and methods of programming nonvolatile memory devices

In an operating method for a nonvolatile memory device, first random data is sensed from a source area of the memory cell array, the first random data having been generated using first random sequence data. While sensing the first random data, third random sequence data is loaded to a page buffer circuit, the third random sequence data being generated from the first random sequence data and second random sequence data. A logical operation is performed on the sensed first random data and the third random sequence data in the page buffer circuit to generate second random data, and the second random data is programmed to a target area in the memory cell array different from the source area.

Method of operating nonvolatile memory devices storing randomized data generated by copyback operation

A nonvolatile memory device includes a memory cell array including a plurality of memory cells, a page buffer circuit connected with the memory cell array via a plurality of bit lines and configured to selectively pre-charge the plurality of bit lines, and control logic configured to control the page buffer circuit such that a pre-charge voltage is applied to selected bit lines of the plurality of bit lines during a first time at a read operation and such that a pre-charge voltage is applied to selected bit lines of the plurality of bit lines during a second time different from the first time at a verification read operation. The second time is determined on the basis of the number of selected bit lines of the plurality of bit lines at the verification read operation.

Nonvolatile memory device and method of improving a program efficiency thereof

Disclosed is a flash memory device and programming method that includes; receiving buffer data and determining between a high-speed mode and a reliability mode for buffer data, and upon determining the reliability mode storing the buffer data in a first buffer region, and upon determining the high-speed mode storing the buffer data in a second buffer region. The memory cell array of the flash memory including a main region and a separately designated buffer region divided into the first buffer region and second buffer region.

Flash memory device and program method

Provided is a flash memory device and a method of programming the same. The flash memory device includes a memory cell array, a first judgment circuit and a second judgment circuit. The memory cell array includes multiple main cells and multiple flag cells. The first judgment circuit judges program pass of the main cells, and the second judgment circuit judges program pass of the flag cells by applying a more strict judgment reference than the first judgment circuit.

Growing community of inventors

Seongnam-si, South Korea

Seung-Hwan Shin