The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Aug. 30, 2012
Applicants:

Sang-yong Yoon, Seoul, KR;

Bo-geun Kim, Suwon-si, KR;

Seung-hwan Shin, Ulsan, KR;

Inventors:

Sang-Yong Yoon, Seoul, KR;

Bo-Geun Kim, Suwon-si, KR;

Seung-Hwan Shin, Ulsan, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 13/00 (2006.01); G06F 13/28 (2006.01); G11C 16/26 (2006.01); G06F 12/02 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 12/0246 (2013.01); G11C 13/0002 (2013.01); G11C 13/0069 (2013.01); G06F 2212/7203 (2013.01); G11C 2013/0076 (2013.01); G11C 2213/71 (2013.01);
Abstract

In an operating method for a nonvolatile memory device, first random data is sensed from a source area of the memory cell array, the first random data having been generated using first random sequence data. While sensing the first random data, third random sequence data is loaded to a page buffer circuit, the third random sequence data being generated from the first random sequence data and second random sequence data. A logical operation is performed on the sensed first random data and the third random sequence data in the page buffer circuit to generate second random data, and the second random data is programmed to a target area in the memory cell array different from the source area.


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