This inventor holds 2 USPTO granted patents and 1 EPO patent. Top assignee: Shin-Etsu Handotai Co., Ltd.. Active years: 2020-2022.
Company Filing History:
Years Active: 2020-2022
Title: Setsuya Hama: Innovator in SOI Wafer Manufacturing
Introduction
Setsuya Hama is a notable inventor based in Annaka, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of bonded Silicon-On-Insulator (SOI) wafers. With a total of 2 patents to his name, Hama's work has advanced the efficiency and quality of SOI wafer production.
Latest Patents
Hama's latest patents focus on innovative methods for manufacturing bonded SOI wafers. The first patent describes a method that includes preparing a silicon single crystal wafer with a specific interstitial oxygen concentration. This method involves forming a silicon oxide film on the wafer's surface and bonding it to another wafer, which helps suppress the formation of oxide precipitates and slip dislocations. The second patent outlines a heat treatment process in an argon atmosphere to flatten the front surface of the SOI layer. This method utilizes a dummy silicon wafer to minimize defects during the heat treatment process.
Career Highlights
Hama is currently employed at Shin-Etsu Handotai Co., Ltd., a leading company in the semiconductor industry. His work at this organization has allowed him to collaborate with other experts in the field and contribute to groundbreaking advancements in wafer technology.
Collaborations
One of Hama's notable collaborators is Toru Ishizuka. Their partnership has fostered innovation and development in the manufacturing processes of SOI wafers.
Conclusion
Setsuya Hama's contributions to the semiconductor industry through his patents and work at Shin-Etsu Handotai Co., Ltd. highlight his role as a key innovator in the field. His methods for manufacturing bonded SOI wafers are paving the way for advancements in semiconductor technology.