This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Intel Corporation. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Innovations by Seonghyun Paik in Transistor Structures
Introduction
Seonghyun Paik is an accomplished inventor based in Hillsboro, Oregon. He has made significant contributions to the field of semiconductor technology, particularly in the design and performance tuning of transistor structures. His innovative work has led to the development of a unique patent that enhances the functionality of N-metal oxide semiconductor (N-MOS) devices.
Latest Patents
Seonghyun Paik holds a patent for a "Gate end cap and boundary placement in transistor structures for N-metal oxide semiconductor (N-MOS) performance tuning." This patent describes a transistor structure that includes a channel region with a first sidewall. The gate electrode consists of a first layer with portions adjacent to the sidewall and boundary sidewall. Additionally, a second layer is positioned between the first layer's portions. The first layer is associated with a specific work function material, while the second layer can modulate the threshold voltage of the transistor structure based on its lateral thickness. This innovative design allows for improved performance tuning of N-MOS devices.
Career Highlights
Seonghyun Paik is currently employed at Intel Corporation, a leading company in semiconductor manufacturing. His work at Intel has allowed him to collaborate with some of the brightest minds in the industry, contributing to advancements in technology and innovation.
Collaborations
One of his notable coworkers is Andrew Smith, with whom he has likely collaborated on various projects within the semiconductor field. Their combined expertise contributes to the ongoing innovation at Intel Corporation.
Conclusion
Seonghyun Paik's contributions to transistor technology exemplify the spirit of innovation in the semiconductor industry. His patent reflects a significant advancement in N-MOS performance tuning, showcasing his dedication to enhancing electronic device functionality.