The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Sep. 09, 2021
Intel Corporation, Santa Clara, CA (US);
Andrew Smith, Hillsboro, OR (US);
Brian Greene, Portland, OR (US);
Seonghyun Paik, Hillsboro, OR (US);
Omair Saadat, Portland, OR (US);
Chung-Hsun Lin, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A transistor structure includes a channel region including first sidewall. A gate electrode includes a first layer having a first portion adjacent to the first sidewall and a second portion adjacent to a gate electrode boundary sidewall. The gate electrode includes a second layer between the first and second portions of the first layer. The first layer has a first composition associated with a first work function material, and has a first lateral thickness from the first sidewall. The second layer has a second composition associated with a second work function material. Depending one a second lateral thickness of the second layer, the second layer may modulate a threshold voltage (V) of the transistor structure by more or less. In some embodiments, a ratio of the second lateral thickness to the first lateral thickness is less than three.