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For the Inventor, By the Inventor

Seoul, South Korea

Seong-Jun Heo

USPTO Granted Patents = 10

Average Co-Inventor Count = 5.4

ph-index = 4

Forward Citations = 34(Granted Patents)


Company Filing History:

goldMedal10 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2004-2010

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10 patents (USPTO):
1. 7772643 - Methods of fabricating semiconductor device having a metal gate pattern (2010-08-10),
2. 7544996 - Methods of fabricating a semiconductor device having a metal gate pattern (2009-06-09),
3. 7465617 - Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer (2008-12-16),
4. 7306996 - Methods of fabricating a semiconductor device having a metal gate pattern (2007-12-11),
5. 7109104 - Methods of fabricating a semiconductor device having a metal gate pattern (2006-09-19),
6. 7098123 - Methods of forming a semiconductor device having a metal gate electrode and associated devices (2006-08-29),
7. 7005367 - Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer (2006-02-28),
8. 6960515 - Method of forming a metal gate (2005-11-01),
9. 6797559 - Method of fabricating semiconductor device having metal conducting layer (2004-09-28),
10. 6764961 - Method of forming a metal gate electrode (2004-07-20),

Title: Inventor Seong-Jun Heo: Innovating Semiconductor Fabrication in Seoul

Introduction

Seong-Jun Heo is a prominent inventor based in Seoul, South Korea, known for his significant contributions to the field of semiconductor technology. With a total of 10 patents to his name, Heo demonstrates a profound expertise in developing innovative solutions that enhance semiconductor fabrication processes.

Latest Patents

One of Heo's latest patents is a method for fabricating semiconductor devices that utilize metal gate patterns. This innovative technique involves the use of capping layers to control the oxidation rates of different parts of the metal gate during the oxidation process. His method encompasses a multilayer structure for the capping layers, which can be etched for forming insulating spacers along the metal gate pattern's sidewalls. The incorporation of selective oxidation processes, including wet oxidation employing partial pressures of water and hydrogen in an H-rich atmosphere, allows for precise oxidation control. This breakthrough technique minimizes etch damage to the silicon substrate and the metal gate's edges while preserving the gate insulating layer's original thickness and maintaining the conductivity of the metal layers.

Career Highlights

Seong-Jun Heo's journey in the realm of semiconductor innovation is marked by his position at Samsung Electronics Co., Ltd. His work has significantly advanced semiconductor manufacturing technologies, showcasing his talent as an inventor capable of addressing complex challenges in the industry.

Collaborations

Throughout his career, Heo has collaborated with esteemed colleagues, including Sun-Pil Youn and Ja-Hum Ku. These collaborations have been instrumental in furthering semiconductor research and development, enriching the collective knowledge and innovation within their field.

Conclusion

In conclusion, Seong-Jun Heo stands out as a key figure in semiconductor innovation. His dedication to improving fabrication techniques through cutting-edge patents highlights his status as a leading inventor. As the semiconductor industry continues to evolve, Heo's contributions will undoubtedly play a crucial role in shaping its future.

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