The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Dec. 04, 2001
Applicants:
Mahn-ho Cho, Seoul, KR;
Ja-hum Ku, Sungnam-shi, KR;
Chul-joon Choi, Koyang-shi, KR;
Jun-kyu Cho, Kwangju, KR;
Seong-jun Heo, Seoul, KR;
Inventors:
Mahn-Ho Cho, Seoul, KR;
Ja-Hum Ku, Sungnam-shi, KR;
Chul-Joon Choi, Koyang-shi, KR;
Jun-Kyu Cho, Kwangju, KR;
Seong-Jun Heo, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/3205 ; H01L021/31 ; H01L021/8234 ;
U.S. Cl.
CPC ...
Abstract
In a method of forming a metal gate electrode, an annealing process is performed in a hydrogen-containing gas ambient following a selective oxidation process. During the annealing process, a metal oxide layer formed by the selective oxidation process is removed by a reduction reaction or hydrogen atoms are contained in the metal oxide layer to suppress whisker nucleation and surface mobility.