Seong Je Park

Title: Seong Je Park: Innovator in Memory Cell Sensing Circuits

Introduction

Seong Je Park is a notable inventor based in San Jose, California. He has made significant contributions to the field of memory cell sensing circuits, showcasing his expertise through his innovative patent.

Latest Patents

Seong Je Park holds a patent for a "Memory cell sensing circuit with adjusted bias from pre-boost operation." This invention involves a sense circuit that performs a multistage boost, including a boost during precharge operation and a boost during the standard boost operation. The sense circuit features an output transistor that drives a sense output based on current through a sense node, which in turn drives the gate of the output transistor. Additionally, the sense circuit includes a precharge circuit to precharge the sense node and the gate of the output transistor, along with a boost circuit to enhance the sense node. The boost circuit can be activated during precharge by a first boost voltage, leading to a lower boost applied to the sense node after precharge. Ultimately, the boost circuit boosts the sense node down by the full boost voltage of the first boost voltage plus the second boost voltage after sensing.

Career Highlights

Seong Je Park is currently employed at Intel NDTM US LLC, where he continues to develop innovative technologies. His work at Intel has positioned him as a key player in advancing memory cell technology.

Collaborations

Seong Je Park collaborates with talented individuals such as Shantanu R Rajwade and Bayan Nasri, contributing to a dynamic and innovative work environment.

Conclusion

Seong Je Park's contributions to memory cell sensing circuits exemplify his innovative spirit and dedication to advancing technology. His patent and work at Intel highlight his role as a significant inventor in the field.