Intel Ndtm US LLC

Seong Je Park

Shantanu R Rajwade

Tzu-Ning Fang

Rezaul Haque

Narayanan Ramanan

Matin Amani

Netra Mahuli

Ahsanur Rahman

Bayan Nasri

Dhanashree R Kulkarni

A sense circuit performs a multistage boost, including a boost during precharge operation and a boost during the standard boost operation. The sense circuit includes an output transistor to drive a sense output based on current through a sense node which drives a gate of the output transistor. The sense circuit includes a precharge circuit to precharge the sense node and the gate of the output transistor and a boost circuit to boost the sense node. The boost circuit can be boosted during precharge by a first boost voltage, resulting in a lower boost applied to the sense node after precharge. The boost circuit boosts up the sense node by a second boost voltage lower than the first boost voltage. The boost circuit boosts the sense node down by the full boost voltage of the first boost voltage plus the second boost voltage after sensing.

Memory cell sensing circuit with adjusted bias from pre-boost operation

Growing community of inventors

San Jose, CA, United States of America

Seong Je Park