Binyamina, Israel

Sela Mador-Haim

This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sela Mador-Haim. Retrieved from https://idiyas.com/inventor/sela-mador-haim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Sela Mador-Haim: Innovator in VLSI Design Analysis

Introduction

Sela Mador-Haim is a notable inventor based in Binyamina, Israel. He has made significant contributions to the field of VLSI design analysis, particularly through his innovative patent. His work focuses on formal verification and failure analysis of complex models and designs.

Latest Patents

Sela holds a patent for a "System and method to analyze VLSI designs." This invention provides a comprehensive approach to formal verification and rectification of VLSI designs, which are crucial for processors, circuits, and logical systems. The system incorporates a multi-value annotation scheme for different types of signal values, enhancing the analysis process. Additionally, it features a generator of counter-examples, which aids in further understanding the design's functionality.

Career Highlights

Sela Mador-Haim is currently employed at Intel Corporation, where he continues to develop and refine his innovative ideas. His expertise in VLSI design has positioned him as a valuable asset in the tech industry.

Collaborations

Sela has collaborated with talented individuals such as Gila Kamhi and Marcelo Glusman, contributing to the advancement of technology in their respective fields.

Conclusion

Sela Mador-Haim's contributions to VLSI design analysis exemplify the impact of innovation in technology. His patent and work at Intel Corporation highlight his role as a leading inventor in this critical area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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