Tokyo, Japan

Seigo Namioka


Average Co-Inventor Count = 1.9

ph-index = 1

Forward Citations = 4(Granted Patents)


Location History:

  • Kawasaki, JP (2016)
  • Ibaraki, JP (2021)
  • Tokyo, JP (2022)

Company Filing History:


Years Active: 2016-2025

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5 patents (USPTO):Explore Patents

Title: Seigo Namioka: Innovator in Semiconductor Technology

Introduction

Seigo Namioka is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on innovative semiconductor devices and methods of manufacturing them.

Latest Patents

One of his latest patents is a semiconductor device and method of manufacturing the same. This invention includes a trench emitter electrode located at a boundary between one end of an active cell region and an inactive cell region. It also features a trench gate electrode at the boundary of the other end of the active cell region and the inactive cell region. Additionally, it incorporates an end trench gate electrode connected to one end of the trench gate electrode and an end trench emitter electrode connected to one end of the trench emitter electrode. A hole barrier region of a first conductivity type is provided under a body region of a second conductivity type between the end trench gate electrode and the end trench emitter electrode in a plan view. Furthermore, a body region in the active cell region and a body region in the inactive cell region are connected to each other by a body region situated between the end trench gate electrode and the end trench emitter electrode.

Another notable patent is a semiconductor device that includes a substrate, an optical element, and a semiconductor element. The substrate consists of a first region and a second region that differ from each other. The optical element is formed in one of these regions, while the electric element is formed in the other. The first region includes a first insulating layer and a first semiconductor layer formed on the first insulating layer. The second region comprises the first insulating layer, the first semiconductor layer, a second insulating layer formed on the first semiconductor layer, and a second semiconductor layer formed on the second insulating layer.

Career Highlights

Seigo Namioka is currently employed at Renesas Electronics Corporation, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in advancing the technology used in various electronic devices.

Collaborations

He has collaborated with notable coworkers such as Yasutaka Nakashiba and Tetsuya Iida, contributing to the development of cutting-edge semiconductor technologies.

Conclusion

Seigo Namioka's contributions to semiconductor technology are significant and impactful. His innovative patents and collaborations highlight his role as a leading inventor in the

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