The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Mar. 06, 2020
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Seigo Namioka, Tokyo, JP;

Yasutaka Nakashiba, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/58 (2010.01); H01S 5/026 (2006.01); H01L 25/16 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/58 (2013.01); H01L 25/167 (2013.01); H01L 33/005 (2013.01); H01S 5/026 (2013.01);
Abstract

A semiconductor device includes a substrate, an optical element, and a semiconductor element. The substrate includes a first region and a second region which are regions differing from each other. The optical element is formed in one of the first region and the second region. The electric element is formed in another of the first region and the second region. The first region includes a first insulating layer and a first semiconductor layer formed on the first insulating layer. The second region includes the first insulating layer, the first semiconductor layer, a second insulating layer formed on the first semiconductor layer, and a second semiconductor layer formed on the second insulating layer.


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