The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Mar. 07, 2023
Renesas Electronics Corporation, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a trench emitter electrode located at a boundary between one end of an active cell region and an inactive cell region, a trench gate electrode located at a boundary between the other end of the active cell region and the inactive cell region, an end trench gate electrode connected to one end of the trench gate electrode, and an end trench emitter electrode connected to one end of the trench emitter electrode. A hole barrier region of a first conductivity type is provided under a body region of a second conductivity type between the end trench gate electrode and the end trench emitter electrode in a plan view. A body region in the active cell region and a body region in the inactive cell region are connected to each other by a body region between the end trench gate electrode and the end trench emitter electrode.