Higashimurayama, Japan

Sedng-Kee Park


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2005-2011

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4 patents (USPTO):Explore Patents

Title: The Innovations of Sedng-Kee Park

Introduction

Sedng-Kee Park is a notable inventor based in Higashimurayama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on the development of thin film semiconductor devices, which are crucial for modern electronic applications.

Latest Patents

Among his latest patents, Sedng-Kee Park has developed a thin film semiconductor device that includes an insulating substrate and a silicon thin film formed over it. This device features a transistor that utilizes the silicon thin film as its channel. The silicon thin film consists of a polycrystal structure, where a series of narrow, rectangular crystal grains are meticulously arranged. Notably, the surface of the polycrystal is flat at the grain boundaries, ensuring optimal performance. The average film thickness of the boundaries of the crystals in the silicon thin film ranges from 90 to 110% of the intra-grain average film thickness, which enhances the device's efficiency.

Career Highlights

Sedng-Kee Park has had a distinguished career, working with prominent companies such as Hitachi, Ltd. and Hitachi Displays, Ltd. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to various innovative projects.

Collaborations

Throughout his career, Sedng-Kee Park has collaborated with esteemed colleagues, including Shinya Yamaguchi and Mutsuko Hatano. These partnerships have fostered a creative environment that has led to groundbreaking advancements in the field.

Conclusion

Sedng-Kee Park's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the industry. His innovative work continues to influence the development of advanced electronic devices.

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