The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2005
Filed:
May. 16, 2003
Shinya Yamaguchi, Mitaka, JP;
Mutsuko Hatano, Kokubunji, JP;
Mitsuharu Tai, Kokubunji, JP;
Sedng-kee Park, Higashimurayama, JP;
Takeo Shiba, Kodaira, JP;
Shinya Yamaguchi, Mitaka, JP;
Mutsuko Hatano, Kokubunji, JP;
Mitsuharu Tai, Kokubunji, JP;
Sedng-Kee Park, Higashimurayama, JP;
Takeo Shiba, Kodaira, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In a film semiconductor device according to the present invention, a continuous oscillating light beam from a solid laser or the like is modulated on time axis and spatially, thereby realizing crystal growth that is nearly optimum for a crystal structure and growth speed of crystals in a Si thin film. Crystal grains with a large diameter, flatness with no projections at their grain boundaries, and controlled surface orientations are thereby formed. By forming channels with these crystal grains, high mobility semiconductor devices and an image display device using these semiconductor devices are realized.